主要从事光电材料及薄膜器件的研究，包括杂化钙钛矿材料和稀土掺杂氧化物，以及原子层沉积工艺在各种光电器件中的应用开发；以第一作者或通讯作者在Advanced Materials、Advanced Optical Materials、Scripta Materialia、Applied Physics Letters、Optics Express等国际知名学术期刊上发表论文20篇。主持国家自然科学基金青年项目和中国博士后科学基金项目各一项，参与国家973项目子课题一项以及国家自然科学基金面上项目两项。

2022年至今 南开大学材料学院 副研究员

2018年-2021年 南开大学材料学院 助理研究员

2016-2018年 南开大学材料学院 博士后

2014-2016年 山东大学-浪潮集团 联培博士后

2009-2014年 浙江大学材料科学与工程学系 工学博士

2005-2009年 浙江大学材料科学与工程学系 工学学士

[1] Advanced Materials 33, 2100783 (2021), Highly Efficient Pure-Blue Light-Emitting Diodes Based on Rb and Cl Alloyed Metal Halide Perovskite.

[2] Journal of Alloys and Compounds 885, 160993 (2021), Electroluminescent polycrystalline Er-doped Lu₃Al₅O₁₂ nanofilms fabricated by atomic layer deposition on silicon.

[3] Applied Physics Letters 118, 141104 (2021), Highly efficient and stable electroluminescence from Er-doped Ga₂O₃ nanofilms fabricated by atomic layer deposition on silicon. [Featured Article]

[4] Scripta Materialia 196, 113750 (2021), Bright red electroluminescence from Al₂O₃/Eu₂O₃ nanolaminate films fabricated by atomic layer deposition on silicon.

[5] Optics Express 29(1), 37-47 (2021), Electroluminescent Y₃Al₅O₁₂ nanofilms fabricated by atomic layer deposition on silicon: Using Yb as the luminescent dopant and crystallization impetus.

[6] Journal of Alloys and Compounds 832, 154964 (2020), Silicon-based electroluminescent polycrystalline Er-doped Yb₃Al₅O₁₂ nanofilms fabricated by atomic layer deposition.

[7] Journal of Physics D: Applied Physics 53, 215104 (2020), Control of interaction between Tm₂O₃ layers in electroluminescent Al₂O₃/Tm₂O₃ nanolaminate films fabricated by atomic layer deposition.

[8] Optical Materials 107, 110125 (2020), Exploration of the green electroluminescence from Al₂O₃/Ho₂O₃ nanolaminate films fabricated by atomic layer deposition on silicon.

[9] Physica Status Solidi – RRL 13, 1900137 (2019), Energy transfer under electrical excitation and enhanced electroluminescence in the nanolaminate Yb,Er co-doped Al₂O₃ films.

[10] Nanomaterials 9(3), 413 (2019), Blue electroluminescent Al₂O₃/Tm₂O₃ nanolaminate films fabricated by atomic layer deposition on silicon.

[11] Optical Materials 80, 209-215 (2018), Electroluminescent Yb₂O₃:Er and Yb₂Si₂O₇:Er nanolaminate films fabricated by atomic layer deposition on silicon.

[12] Scripta Materialia 151, 1-5 (2018), Near-infrared electroluminescence from atomic layer doped Al₂O₃:Yb nanolaminate films on silicon.

[13] Optics Express 26(7), 9344-9352 (2018), Intense electroluminescence from atomic layer doped Al₂O₃/Tb₂O₃ nanolaminate films on silicon.

[14] Advanced Optical Materials 2, 240-244 (2014), Rare-earth doped ZnO films: a material platform to realize multicolor and near-infrared electroluminescence.

[15] Applied Physics Letters 104, 201109 (2014), Near-infrared electroluminescence from light-emitting devices based on Nd-doped TiO₂/p⁺-Si heterostructures.

[16] Scripta Materialia 69, 748-751 (2013), Room temperature visible electroluminescence from SrTiO₃/p⁺-Si heterostructure.

[17] AIP Advances 4, 047109 (2014), Visible and near-infrared electroluminescence from TiO₂/p⁺-Si heterostructured device.

[18] Applied Physics Letters 102, 021108 (2013), Light-emitting devices based on erbium-doped TiO₂/p⁺-Si heterostructures: Engineering of electroluminescence via aluminum co-doping.

[19] Applied Physics Letters 102, 181111 (2013), Low-voltage driven ~1.54 μm electroluminescence from erbium-doped ZnO/p⁺-Si heterostructured devices: Energy transfer from ZnO host to erbium ions.

[20] Applied Physics Letters 100, 031103 (2012), Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO₂/p⁺-Si heterostructure.